In Situ Observation of Quantized Growth of Titanium Silicide in Ultra High Vacuum Transmission Electron Microscope (UHV-TEM) |
| Journal |
Advances in Science and Technology (Volume 51) |
| Volume |
Disclosing Materials at the Nanoscale |
| Edited by |
P. VINCENZINI and G. MARLETTA |
| Pages |
14-19 |
| DOI |
10.4028/www.scientific.net/AST.51.14 |
| Online since |
October, 2006 |
| Authors |
Cheng Lun Hsin,
Wen Wei Wu,
Hung Chang Hsu,
Lih Juann Chen
|
| Keywords |
Dynamics, In Situ Ultrahigh Vacuum Transmission Electron Microscope, Silicide |
| Abstract |
Dynamic study of the growth of TiSi2 nanorods on Si bicrystal was conducted in
an ultrahigh vacuum transmission electron microscope. The growth of the nanorods
was affected by the underlying dislocation grids significantly. The dislocation grids
confined the shape of the nanoclusters and nanorods. Compared to the time of the
nanorod remaining at the same length, the elongating time is relatively short. The
dislocation network confined the nanorod to match the dislocation interspacing and
the step-wise growth of the nanorod was found. The growth mechanism is attributed
to the compliant effect. The observation was constructive to the basic understanding
of the stress effect on the initial stage of the reaction of metals on Si. |
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