Transport Properties of (Ga,Mn)As Diluted Magnetic Semiconductors in the Bulk and in Layered Systems |
| Journal |
Advances in Science and Technology (Volume 52) |
| Volume |
Spin Injection and Transport in Magnetoelectronics |
| Edited by |
P. VINCENZINI and D. FIORANI |
| Pages |
1-10 |
| DOI |
10.4028/www.scientific.net/AST.52.1 |
| Online since |
October, 2006 |
| Authors |
Ilja Turek,
K. Carva,
J. Kudrnovsky
|
| Keywords |
Ab Initio Calculation, Diluted Magnetic Semiconductor, Spin-Polarized Transport |
| Abstract |
Transport properties of systems based on diluted magnetic semiconductors (Ga,Mn)As
are investigated theoretically by means of the Kubo linear response theory. The underlying
electronic structure is obtained within the local spin-density approximation using the scalarrelativistic
tight-binding linear muffin-tin orbital (TB-LMTO) method. The effect of substitutional
randomness on the electronic structure and on the transport properties is systematically described in
the coherent potential approximation (CPA). The quantities studied include the residual resistivities
of the bulk alloys as well as conductances of epitaxial trilayers Cr/(Ga,Mn)As/Cr (001) in the
current-perpendicular-to-plane (CPP) orientation. The results witness that various compensating
defects such as As antisite atoms and Mn interstitials have much stronger detrimental effect on the
spin polarization of the CPP conductances as compared to their influence on the spin polarization of
the bulk conductivities. |
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