First-Principles Approach to Mn-Doped Group IV Semiconductors: Comparison with Experiments and Outlook |
| Journal |
Advances in Science and Technology (Volume 52) |
| Volume |
Spin Injection and Transport in Magnetoelectronics |
| Edited by |
P. VINCENZINI and D. FIORANI |
| Pages |
11-20 |
| DOI |
10.4028/www.scientific.net/AST.52.11 |
| Online since |
October, 2006 |
| Authors |
Alessandra Continenza,
Silvia Picozzi,
Gianni Profeta,
Luca Ottaviano,
Maurizio Passacantando,
Franco D'Orazio,
Franco Lucari
|
| Keywords |
Diluted Magnetic Semiconductor, First Principles Calculation, Spintronics |
| Abstract |
We present an extensive theoretical and experimental study of the Mn-Ge dilute magnetic
semiconductor, a material which - due to its high integrability with mainstream Si technology - may
hold good promises for spintronic applications. Ab-initio calculations on several different systems
containing isolated Mn impurities as well as small clusters (up to three Mn impurities) show that
Mn has a tendency to segregate into the Ge matrix and to stabilize occupation of interstitial sites if
these are coordinated with other Mn occupying substitutional sites nearby. Several different
experimental characterizations (HRTEM, XRD, UPS, MOKE) performed on Mn ion-implanted
systems are analyzed and discussed: a close comparison betweeen experimental evidences and
density functional calculations allows a full understanding of the sample properties and to
disentagle the contributions coming from the diluted and segregated phases. The complexity of this
system shows that much has to be done still to understand the physics of these materials and to
undisclose all their possible applications. |
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