Transient Wigner Function Studies of DMS Barrier Devices |
| Journal |
Advances in Science and Technology (Volume 52) |
| Volume |
Spin Injection and Transport in Magnetoelectronics |
| Edited by |
P. VINCENZINI and D. FIORANI |
| Pages |
36-41 |
| DOI |
10.4028/www.scientific.net/AST.52.36 |
| Online since |
October, 2006 |
| Authors |
H.L. Grubin
|
| Keywords |
Barrier Devices, DMS, g-Factor, Superlattice, Wigner Transport |
| Abstract |
Incorporating diluted magnetic semiconductor (DMS) layers within barrier
devices offers new device design potential. To study these devices we have
generalized an existing time dependent transient algorithm that couples the Wigner
transport equation to Poisson’s equation and an external circuit. For electron transport
we have studied alterations in the dc and time dependent behavior of resonant
tunneling diodes with DMS barriers and wells, have transformed a single barrier
structure into a double barrier structure and examined the increased functionality of
the devices. We present new results, including some preliminary calculations incorporating
holes, discuss transients and the potential role that DMS layers will
play in controlling the transient operation of superlattice structures. |
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