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Ferromagnetic Property of Co and Fe-Implanted ZnO Thin Film at Room Temperature

Journal Advances in Science and Technology (Volume 52)
Volume Spin Injection and Transport in Magnetoelectronics
Edited by P. VINCENZINI and D. FIORANI
Pages 42-47
DOI 10.4028/www.scientific.net/AST.52.42
Citation W.K. Choi et al., 2006, Advances in Science and Technology, 52, 42
Online since October, 2006
Authors W.K. Choi, B. Angadi, H.C. Park, J.H. Lee, Jong Han Song, Ravi Kumar
Keywords Co-Implanted ZnO, Diluted Magnetic Semiconductor, Fe-Implanted ZnO, Ferromagnetic, Swift Heavy Ion (SHI) Irradiation
Abstract

The results Co and Fe implanted ZnO thin films were studied before and after 200 MeV Ag ion irradiation. The as-implanted films shows the presence of nano sized Co and Fe clusters as seen through XRD patterns and exhibited high resistivity compared to un-implanted films. After Ag ion irradiation the Co and Fe clusters get dissolved in ZnO lattice and the films resistivity reduced to half of the as implanted values. The magnetic properties of Ag irradiated films were confirmed through magnetization hysteresis and Co implanted films exhibit higher magnetization compared to Fe implanted films.

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