Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films |
| Journal |
Advances in Science and Technology (Volume 52) |
| Volume |
Spin Injection and Transport in Magnetoelectronics |
| Edited by |
P. VINCENZINI and D. FIORANI |
| Pages |
70-74 |
| DOI |
10.4028/www.scientific.net/AST.52.70 |
| Online since |
October, 2006 |
| Authors |
Shinichi Kikkawa,
K. Sakon,
Y. Kawaai,
T. Takeda
|
| Keywords |
Granular Film, Iron Nitride, Magnetite Film, Magnetoresistance |
| Abstract |
Iron nitrides thermally decompose to α-Fe releasing their nitrogen above 300ºC. MR
effect was found out in the thin films obtained by post-annealing of the following two kinds of sputter
deposited iron nitride related films. (1) α-Fe particles dispersed in AlN granular film was obtained by
an annealing of Al0.31Fe0.69N sputter deposited film in hydrogen. The MR=0.82% was found out in
this nitride system. (2) Fe3O4 thin films were prepared by thermal decomposition of sputter deposited
iron nitride films in low oxygen partial pressure. The iron nitrides were defect rock salt type γ΄˝-FeNx
(0.5≤x≤0.7) and zinc blende type γ˝-FeNy (0.8≤y≤0.9) at the sputter nitrogen gas pressure of 1Pa and
6Pa. MR ratios of the oxide films were about 2%. |
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