Paper Title:
Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films
  Abstract

Iron nitrides thermally decompose to α-Fe releasing their nitrogen above 300°C. MR effect was found out in the thin films obtained by post-annealing of the following two kinds of sputter deposited iron nitride related films. (1) α-Fe particles dispersed in AlN granular film was obtained by an annealing of Al0.31Fe0.69N sputter deposited film in hydrogen. The MR=0.82% was found out in this nitride system. (2) Fe3O4 thin films were prepared by thermal decomposition of sputter deposited iron nitride films in low oxygen partial pressure. The iron nitrides were defect rock salt type γ΄˝-FeNx (0.5≤x≤0.7) and zinc blende type γ˝-FeNy (0.8≤y≤0.9) at the sputter nitrogen gas pressure of 1Pa and 6Pa. MR ratios of the oxide films were about 2%.

  Info
Periodical
Edited by
P. VINCENZINI and D. FIORANI
Pages
70-74
DOI
10.4028/www.scientific.net/AST.52.70
Citation
S. Kikkawa, K. Sakon, Y. Kawaai, T. Takeda, "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films", Advances in Science and Technology, Vol. 52, pp. 70-74, 2006
Online since
October 2006
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