Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films |
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| Journal | Advances in Science and Technology (Volume 52) |
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| Volume | Spin Injection and Transport in Magnetoelectronics |
| Edited by | P. VINCENZINI and D. FIORANI |
| Pages | 70-74 |
| DOI | 10.4028/www.scientific.net/AST.52.70 |
| Citation | Shinichi Kikkawa et al., 2006, Advances in Science and Technology, 52, 70 |
| Online since | October, 2006 |
| Authors | Shinichi Kikkawa, K. Sakon, Y. Kawaai, T. Takeda |
| Keywords | Granular Film, Iron Nitride, Magnetite Film, Magnetoresistivity MR |
| Abstract | Iron nitrides thermally decompose to α-Fe releasing their nitrogen above 300ºC. MR effect was found out in the thin films obtained by post-annealing of the following two kinds of sputter deposited iron nitride related films. (1) α-Fe particles dispersed in AlN granular film was obtained by an annealing of Al0.31Fe0.69N sputter deposited film in hydrogen. The MR=0.82% was found out in this nitride system. (2) Fe3O4 thin films were prepared by thermal decomposition of sputter deposited iron nitride films in low oxygen partial pressure. The iron nitrides were defect rock salt type γ΄˝-FeNx (0.5≤x≤0.7) and zinc blende type γ˝-FeNy (0.8≤y≤0.9) at the sputter nitrogen gas pressure of 1Pa and 6Pa. MR ratios of the oxide films were about 2%. |
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