Paper Title:
Formation of Highly Transparent SiCN Films Prepared by HWCVD
  Abstract

Highly transparent silicon carbon nitride (SiCN) films were prepared by hot wire chemical vapor deposition (HWCVD) at low temperature as low as 40oC. Hexamethyldisilazane (HMDS) and NH3 were used as the source materials for SiCN deposition. The SiCN film prepared by only HMDS was completely transparent in the wavelength of the visible region. Moreover, there was a little absorption in the ultraviolet region. However, SiCN prepared by using HMDS and NH3 showed almost transparent both visible and UV regions.

  Info
Periodical
Edited by
Pietro VINCENZINI and Giuseppe D'ARRIGO
Pages
223-226
DOI
10.4028/www.scientific.net/AST.54.223
Citation
A. Izumi, T. Nakayamada, "Formation of Highly Transparent SiCN Films Prepared by HWCVD", Advances in Science and Technology, Vol. 54, pp. 223-226, 2008
Online since
September 2008
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