Paper Title:
Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices
  Abstract

We present a concept for integration of low temperature fabricated memory devices in a 3-D architecture using a hybrid silicon-organic technology. The realization of electrically erasable read-only memory (EEPROM) like device is based on the fabrication of a V-groove SiGe MOSFET, the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400°C following a process based on wafer bonding. The electrical characteristics of the final hybrid MISFET memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.

  Info
Periodical
Edited by
Pietro VINCENZINI and Giuseppe D'ARRIGO
Pages
451-457
DOI
10.4028/www.scientific.net/AST.54.451
Citation
D. Tsoukalas, S. Kolliopoulou, P. Dimitrakis, P. Normand, M.C. Petty, "Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices", Advances in Science and Technology, Vol. 54, pp. 451-457, 2008
Online since
September 2008
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