Paper Title:
Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films
  Abstract

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

  Info
Periodical
Edited by
Pietro VINCENZINI and Giuseppe D'ARRIGO
Pages
470-473
DOI
10.4028/www.scientific.net/AST.54.470
Citation
H. J. Ha, J.M. Lee, M. Kim, O.H. Kim, "Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films", Advances in Science and Technology, Vol. 54, pp. 470-473, 2008
Online since
September 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dominic Prime, Shashi Paul
Abstract:Organic and polymer based electronic devices are currently the subject of a great deal of scientific investigation and development. This...
480
Authors: Iulia Salaoru, Shashi Paul
Abstract:Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for...
486
Authors: Yong Hui Gao, Wen Long Jiang
Abstract:White organic light emitting devices with the structure of ITO/ MeO-TAD (15 nm) /NPBX(40 nm) /DPVBi(x nm)/ Rubrene(0.3 nm)/DPVBi (20-x) nm...
3048