Paper Title:
Effect of Varying Memory Device Architectures on the Electrical Properties of P(VDF/TrFE)(72/28) Copolymer Thin Film
  Abstract

In this study, the dipole switching and non-volatile memory functionality of poly(vinylidene fluoride-trifluoroethylene) (PVDF/TrFE)(72/28 mol%) random copolymer ultrathin films were analyzed. PVDF/TrFE(72/28) used as ferroelectric insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and ferroelectric field-effect transistors (FeFET) were examined using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Compared to MFM, MFIS device architecture was found to be more suitable for distinguishing the ‘0’ and ‘1’ state using the capacitance-voltage measurement. With FeFET, the measured drain current (Id) as well as its memory window increased with decreasing channel length, thereby enabling the easier identification of ‘0’ and ‘1’ state comparable to the MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices operating at lower voltage with faster data R/W/E speed and memory retention capability.

  Info
Periodical
Edited by
Pietro VINCENZINI and Giuseppe D'ARRIGO
Pages
491-496
DOI
10.4028/www.scientific.net/AST.54.491
Citation
C. W. Choi, A. A. Prabu, S. Yoon, Y. M. Kim, K. J. Kim, "Effect of Varying Memory Device Architectures on the Electrical Properties of P(VDF/TrFE)(72/28) Copolymer Thin Film", Advances in Science and Technology, Vol. 54, pp. 491-496, 2008
Online since
September 2008
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