Paper Title:
High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength
  Abstract

Reaction-sintered silicon carbide of 800 MPa class bending strength had been newly developed. The developed silicon carbide showed good rigidity, high thermal conductivity, and high density, like a conventional sintered silicon carbide. The developed silicon carbide is one of the most attractive materials for large-scale ceramic structures because of its low processing temperature, good shape capability, low-cost processing and high purity. We had fabricated some lightweight space mirrors, such as a high-strength reaction-sintered silicon carbide mirror of 650 mm in diameter. In this study, experiments were conducted to investigate the effect of annealing on the bending strength of high-strength reaction-sintered silicon carbide. The annealing heat treatments were carried out at 1073 K, 1273 K, and 1473 K in an air atmosphere. The maximum bending strength of 1091 MPa at room temperature was achieved by the annealing heat-treatment at 1273 K for 10 h in air. We confirmed that annealing heat treatment was effective to improve the bending strength of reaction-sintered silicon carbide by inducing compressive residual stress at the surface oxide layer.

  Info
Periodical
Edited by
Pietro VINCENZINI, Ralf RIEDEL, Alexander G. MERZHANOV and Chang-Chun GE
Pages
374-382
DOI
10.4028/www.scientific.net/AST.63.374
Citation
S. Suyama, Y. Itoh, "High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength", Advances in Science and Technology, Vol. 63, pp. 374-382, 2010
Online since
October 2010
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Price
$32.00
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