Paper Title:
Spin Manipulation in Co-Doped ZnO
  Abstract

The magnetoresistance of n-type conducting, paramagnetic Co-doped ZnO films prepared by pulsed laser deposition on sapphire substrates has been studied experimentally and theoretically. Positive magnetoresistance (MR) of 124% has been observed in the film with the lowest electron concentration of 8.3·1017 cm−3, while only a negative MR of −1.9% was observed in the film with an electron concentration of 9.9·1019 cm−3 at 5 K. The positive MR is attributed to the quantum correction on the conductivity due to the s-d exchange interaction induced spin splitting of the conduction band. The negative MR is attributed to the magnetic field suppressed weak localization [1]. Voltage control of the electron concentration in Schottky diodes revealed a drastic change of the magnetoresistance and demonstrated the electrically controllable magnetotransport behavior in Co-doped ZnO [2]. The magnetically controllable spin polarization in Co-doped ZnO has been demonstrated at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom electrode and Co as a top electrode [3]. There spin-polarized electrons were injected from Co-doped ZnO to a crystallized Al2O3 layer and tunnelled through an amorphous Al2O3 barrier. Our studies demonstrate the spin polarization and manipulation in Co-doped ZnO.

  Info
Periodical
Edited by
Pietro VINCENZINI, Vojislav V. MITIC, Alois LOIDL and Dino FIORANI
Pages
192-197
DOI
10.4028/www.scientific.net/AST.67.192
Citation
H. Schmidt, "Spin Manipulation in Co-Doped ZnO", Advances in Science and Technology, Vol. 67, pp. 192-197, 2010
Online since
October 2010
Export
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181
Authors: Affa Rozana Abdul Rashid, P. Susthitha Menon, S. Shaari
Chapter 6: New Materials and Composites Materials
Abstract:Mn doped ZnO films with different doping concentration were synthesized by sol gel method using the spin coating technique. Zn1-xMnxO thin...
731
Authors: Xing Gao, Guo You Gan, Ji Kang Yan, Jing Hong Du, Jia Min Zhang, Jian Hong Yi, Li Hui Wang
Chapter 3: Electrical, Magnetic and Optical Ceramics
Abstract:A method using first principles and pseudopotentials based on density functional theory is applied to calculate the electronic structure and...
1257
Authors: Zhong Qiu Xia, Rong Ping Li
Chapter 1: Material Science
Abstract:The band structure and the intensity of states of La-doped ZnTe were obtained using the plane wave ultra soft pseudo potential method based...
11
Authors: M. Rajendraprasad Reddy, Mutsumi Sugiyama, K. T. Ramakrishna Reddy
Chapter 13: Thin Films
Abstract:Nickel-doped ZnO thin films with different Ni contents (0 - 15%) were deposited on glass substrate at 350°C by a spray pyrolysis technique....
1423