Paper Title:

Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices

Periodical Advances in Science and Technology (Volume 67)
Main Theme 12th INTERNATIONAL CERAMICS CONGRESS PART F
Edited by Pietro VINCENZINI, Vojislav V. MITIC, Alois LOIDL and Dino FIORANI
Pages 22-27
DOI 10.4028/www.scientific.net/AST.67.22
Citation Sergey Kozyukhin et al., 2010, Advances in Science and Technology, 67, 22
Online since October, 2010
Authors Sergey Kozyukhin, Alexey Sherchenkov
Keywords Annealing, Differential Scanning Calorimerty, Ge-Sb-Te Alloy, Phase Change Memory (PCM)
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Abstract

Phase change memory materials of Ge-Sb-Te system [(GeTe)m(Sb2Te3)n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by differential scanning calorimetry, and thermal properties were determined. Reproducible endothermic peak in the range of 390-415°C was revealed in Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, which may possibly influence on the kinetics and endurance of data reading processes in phase-change memory devices. The nature of this endothermic peak is discussed. It was shown that additional annealing of synthesized Ge2Sb2Te5 increase stability of structure and thermal properties of the material.