Paper Title:
Quantum Size Effects in a Si:H Films Prepared by PECVD with Different Hydrogen-Diluted Silane
  Abstract

Quantum size effect (QSE) comprises a novel phenomenon where structural, mechanical, thermal, electronic and optical properties of solids are affected by the reduction in particle size. Size-dependent properties in semiconductors and dielectrics come into play especially by making one (thin films) or more (quantum wires and dots) dimensions of a sample very small, particularly going from micro to nano-dimensions. One or more dimensional QSE is accompanied with an increase of the light absorption and the blue-shift of the optical band-gap due to a creation or reduction of the crystallite sizes having different dielectric constants (relative permitivity). Understanding the nature of the size-induced properties is of fundamental importance for advanced technological applications. The size-dependent band-gap makes a material attractive for optical absorption-based applications. In this work, a-Si:H films different in thickness were prepared by PECVD technology using different hydrogen-diluted silane. One-dimensional QSE (when film thickness decreased) and three-dimensional QSE (when due to a high hydrogen-silane dilution the nano-crystalline structure of the films appeared) were observed.

  Info
Periodical
Edited by
Pietro VINCENZINI, Kunihito KOUMOTO, Nicola ROMEO and Mark MEHOS
Pages
137-142
DOI
10.4028/www.scientific.net/AST.74.137
Citation
L. Prušaková, V. Vavruňková, M. Netrvalová, J. Müllerová, P. Šutta, "Quantum Size Effects in a Si:H Films Prepared by PECVD with Different Hydrogen-Diluted Silane", Advances in Science and Technology, Vol. 74, pp. 137-142, 2010
Online since
October 2010
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