Paper Title:
3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers
  Abstract

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Periodical
Defect and Diffusion Forum (Volumes 103-105)
Edited by
Nickolay T. Bagraev
Pages
25-30
DOI
10.4028/www.scientific.net/DDF.103-105.25
Citation
V.V. Ushakov, A.A. Gippius, "3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers", Defect and Diffusion Forum, Vols. 103-105, pp. 25-30, 1993
Online since
January 1993
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Price
$32.00
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