Paper Title:
Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon
  Abstract

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Periodical
Defect and Diffusion Forum (Volumes 103-105)
Edited by
Nickolay T. Bagraev
Pages
283-286
DOI
10.4028/www.scientific.net/DDF.103-105.283
Citation
E. V. Astrova, V.B. Voronkov, A. A. Lebedev, "Capacitance Transient Spectroscopy of Process-Induced Defects with Deep Levels in P-Type Silicon", Defect and Diffusion Forum, Vols. 103-105, pp. 283-286, 1993
Online since
January 1993
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