Paper Title:
Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 103-105)
Edited by
Nickolay T. Bagraev
Pages
311-316
DOI
10.4028/www.scientific.net/DDF.103-105.311
Citation
V. V. Emtsev, V.G. Golubev, P.M. Klinger, G.I. Kropotov, Y.V. Shmartsev, "Defect Production in Si:Ge Irradiated by Gamma-Rays at 4.2K, 78K and 300K", Defect and Diffusion Forum, Vols. 103-105, pp. 311-316, 1993
Online since
January 1993
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Price
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