Paper Title:
Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)-
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 103-105)
Edited by
Nickolay T. Bagraev
Pages
349-366
DOI
10.4028/www.scientific.net/DDF.103-105.349
Citation
S.S. Moliver, "Method and Model for Treating Negative-U Centers in Silicon: Si:Vo and Si:(VH3)- ", Defect and Diffusion Forum, Vols. 103-105, pp. 349-366, 1993
Online since
January 1993
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Price
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