Paper Title:
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 103-105)
Edited by
Nickolay T. Bagraev
Pages
673-0
DOI
10.4028/www.scientific.net/DDF.103-105.673
Citation
M.M. Anikin, A. A. Lebedev, A. M. Strel'chuk, "Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres", Defect and Diffusion Forum, Vols. 103-105, pp. 673-0, 1993
Online since
January 1993
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Price
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