Paper Title:
Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 123-124)
Pages
77-122
DOI
10.4028/www.scientific.net/DDF.123-124.77
Citation
A. Parisini, "Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs", Defect and Diffusion Forum, Vols. 123-124, pp. 77-122, 1995
Online since
March 1995
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