Hydrogen-Dopant Interactins in Crystalline Semiconductors |
| Journal |
Defect and Diffusion Forum (Volumes 131 - 132) |
| Volume |
Defect and Diffusion Forum Vols. 131-132 |
| Pages |
9-88 |
| DOI |
10.4028/www.scientific.net/DDF.131-132.9 |
| Citation |
Jacques Chevallier, 1996, Defect and Diffusion Forum, 131-132, 9 |
| Authors |
Jacques Chevallier |
| Keywords |
AlGaAs, Crystal Growth, Diffusion, Electronic Device Processing, Electronic States, Elemental Semiconductors, GaAs, H-Dopant Complexes, Hydrogen, III-V Compound Semiconductors, II-VI Compound Semiconductors, Infrared Absorption Spectroscopy, InP, Microelectronics, Optoelectronics, Silicon |
| Full Paper |
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