Paper Title:
Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 143-147)
Edited by
H. Mehrer, Chr. Herzig, N.A. Stolwijk, H. Bracht
Pages
999-1002
DOI
10.4028/www.scientific.net/DDF.143-147.999
Citation
M. Yoshida, E. Arai, "Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model", Defect and Diffusion Forum, Vols. 143-147, pp. 999-1002, 1997
Online since
January 1997
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Price
$32.00
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