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Defects Below Mask Edges in Silicon Induced by Amorphizing Implantations

Journal Defect and Diffusion Forum (Volumes 148 - 149)
Volume Defect and Diffusion Forum Vols. 148-149
Edited by David J. Fisher
Pages 103-121
DOI 10.4028/www.scientific.net/DDF.148-149.103
Authors Hans Cerva
Keywords Arsenic, BF2+, Crystal Defect, Dislocation, Implantation, Mask Edge, Phosphorus, Recrystallization, Secondary Defects, Silicon, Transmission Electron Microscopy (TEM), ULSI, VLSI
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