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Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects

Journal Defect and Diffusion Forum (Volumes 153 - 155)
Volume Diffusion in Silicon
Edited by D.J. Fisher
Pages 11-24
DOI 10.4028/www.scientific.net/DDF.153-155.11
Citation D. Mathiot et al., 1997, Defect and Diffusion Forum, 153-155, 11
Authors D. Mathiot, A. Claverie, A. Martinez
Keywords Amorphisation, Anneal, Boron, Defect, Diffusion, Doping, Ion-Implantation, Ostwald Ripening, Self-Interstitial, Silicon
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