Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance |
| Journal |
Defect and Diffusion Forum (Volumes 153 - 155) |
| Volume |
Diffusion in Silicon |
| Edited by |
D.J. Fisher |
| Pages |
137-158 |
| DOI |
10.4028/www.scientific.net/DDF.153-155.137 |
| Citation |
Emanuele Rimini et al., 1997, Defect and Diffusion Forum, 153-155, 137 |
| Authors |
Emanuele Rimini, Salvatore Coffa, Sebania Libertino, G. Mannino, F. Priolo, Vittorio Privitera |
| Keywords |
Deep Levels Transient Spectroscopy DLTS, Plasma Etching, Point Defect, Room Temperature Properties, Spreading Resistance Profiling SRP, Transient Enhanced Diffusion TED, Trap-Limited Migration |
| Full Paper |
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