Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy |
| Journal |
Defect and Diffusion Forum (Volumes 153 - 155) |
| Volume |
Diffusion in Silicon |
| Edited by |
D.J. Fisher |
| Pages |
193-204 |
| DOI |
10.4028/www.scientific.net/DDF.153-155.193 |
| Citation |
Anders Hallén et al., 1997, Defect and Diffusion Forum, 153-155, 193 |
| Authors |
Anders Hallén, N. Keskitalo, Bengt G. Svensson |
| Keywords |
Divacancy, Dose Rate, Ion-Implantation, Point Defect, Silicon, Vacancy Oxygen Centre |
| Full Paper |
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