Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon |
| Journal |
Defect and Diffusion Forum (Volumes 153 - 155) |
| Volume |
Diffusion in Silicon |
| Edited by |
D.J. Fisher |
| Pages |
25-44 |
| DOI |
10.4028/www.scientific.net/DDF.153-155.25 |
| Citation |
Satoshi Matsumoto et al., 1997, Defect and Diffusion Forum, 153-155, 25 |
| Authors |
Satoshi Matsumoto, K. Osada, Y. Zaitsu, T. Shimizu, Eisuke Arai, Shoichiro Tanigawa, F. Uberti |
| Keywords |
Compressive Stress, Dislocations, ECR Plasma CVD, Intrinsic Stress, Positron Beams, Retarded Diffusion, Si3N4 Films, Stacking Fault, Tensile Stress, Transient Enhanced Diffusion TED, Vacancy Supersaturation |
| Full Paper |
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