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Hydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V Compounds

Journal Defect and Diffusion Forum (Volumes 157 - 159)
Volume Diffusion in GaAs and other III-V Semiconductors
Edited by D.J. Fisher
Pages 133-174
DOI 10.4028/www.scientific.net/DDF.157-159.133
Citation Aldo Amore Bonapasta et al., 1998, Defect and Diffusion Forum, 157-159, 133
Authors Aldo Amore Bonapasta, Mario Capizzi
Keywords Deep Impurity, First-Principles Defect Calculations, Impurity Passivation, Shallow Impurity
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