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Hydrogen Diffusion in III-V Semiconductors: Application to the Fabrication and Optimization of Photonic Devices

Journal Defect and Diffusion Forum (Volumes 157 - 159)
Volume Diffusion in GaAs and other III-V Semiconductors
Edited by D.J. Fisher
Pages 191-210
DOI 10.4028/www.scientific.net/DDF.157-159.191
Citation Bertrand Theys, 1998, Defect and Diffusion Forum, 157-159, 191
Authors Bertrand Theys
Keywords Dopant Passivation, GaAs, InP, Lasers, Plasma, Waveguide
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