The Investigation of Structures, Defects and Electrical Properties of GaAs Films Implanted with Arsenic Ions |
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| Journal | Defect and Diffusion Forum (Volumes 157 - 159) |
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| Volume | Diffusion in GaAs and other III-V Semiconductors |
| Edited by | D.J. Fisher |
| Pages | 37-62 |
| DOI | 10.4028/www.scientific.net/DDF.157-159.37 |
| Citation | Wen-Chung Chen et al., 1998, Defect and Diffusion Forum, 157-159, 37 |
| Authors | Wen-Chung Chen, Shou-Chung Lee, C.S. Chang |
| Keywords | Ion-Implantation, Photoluminescence (PL), Thermal Annealing |
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