Paper Title:
IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 171-172)
Edited by
D.J. Fisher
Pages
1-32
DOI
10.4028/www.scientific.net/DDF.171-172.1
Citation
C. A. Londos, L.G. Fytros, G.J. Georgiou, "IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon", Defect and Diffusion Forum, Vols. 171-172, pp. 1-32, 1999
Online since
June 1999
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Price
$32.00
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