Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy |
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| Journal | Defect and Diffusion Forum (Volumes 183 - 185) |
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| Volume | Defects and Diffusion in Semiconductors |
| Edited by | D.J. Fisher |
| Pages | 1-24 |
| DOI | 10.4028/www.scientific.net/DDF.183-185.1 |
| Authors | C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung |
| Keywords | Defect, DLTS, Electron Irradiation, Ion Implantation, PAS, Silicon Carbide (SiC) |
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