Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy |
| Journal |
Defect and Diffusion Forum (Volumes 183 - 185) |
| Volume |
Defects and Diffusion in Semiconductors |
| Edited by |
D.J. Fisher |
| Pages |
1-24 |
| DOI |
10.4028/www.scientific.net/DDF.183-185.1 |
| Citation |
C.C. Ling et al., 2000, Defect and Diffusion Forum, 183-185, 1 |
| Authors |
C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung |
| Keywords |
Defect, DLTS, Electron Irradiation, Ion-Implantation, PAS, Silicon Carbide (SiC) |
| Full Paper |
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