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Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching

Journal Defect and Diffusion Forum (Volumes 183 - 185)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 127-146
DOI 10.4028/www.scientific.net/DDF.183-185.127
Citation F. Frost et al., 2000, Defect and Diffusion Forum, 183-185, 127
Authors F. Frost, G. Lippold, A. Schindler, F. Bigl
Keywords Atomic Force Microscope (AFM), Damage, Etching, InAs, InSb, Ion Beam, Raman Spectroscopy, Smoothing
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