Paper Title:
Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
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Periodical
Defect and Diffusion Forum (Volumes 183-185)
Edited by
D.J. Fisher
Pages
147-152
DOI
10.4028/www.scientific.net/DDF.183-185.147
Citation
J. Wu, F. Lin, "Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors", Defect and Diffusion Forum, Vols. 183-185, pp. 147-152, 2000
Online since
August 2000
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Price
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