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Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors

Journal Defect and Diffusion Forum (Volumes 183 - 185)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 147-152
DOI 10.4028/www.scientific.net/DDF.183-185.147
Citation J. Wu et al., 2000, Defect and Diffusion Forum, 183-185, 147
Authors J. Wu, F. Lin
Keywords In0.8Ga0.2As/InAlAs/InP, Misfit Dislocation, Surface Morphology
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