Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon |
| Journal |
Defect and Diffusion Forum (Volumes 183 - 185) |
| Volume |
Defects and Diffusion in Semiconductors |
| Edited by |
D.J. Fisher |
| Pages |
163-170 |
| DOI |
10.4028/www.scientific.net/DDF.183-185.163 |
| Citation |
J. Wong-Leung et al., 2000, Defect and Diffusion Forum, 183-185, 163 |
| Authors |
J. Wong-Leung, S. Fatima, C. Jagadish, J.D. FitzGerald |
| Keywords |
Critical Dose, Interstitial Defects, Ion-Implantation, Loop, Rod-Like Defects, Silicon |
| Full Paper |
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