Diffusion and Electrical Properties of Nickel in Silicon |
| Journal |
Defect and Diffusion Forum (Volumes 183 - 185) |
| Volume |
Defects and Diffusion in Semiconductors |
| Edited by |
D.J. Fisher |
| Pages |
171-180 |
| DOI |
10.4028/www.scientific.net/DDF.183-185.171 |
| Citation |
S. Tanaka et al., 2000, Defect and Diffusion Forum, 183-185, 171 |
| Authors |
S. Tanaka, T. Ikari, H. Kitagawa |
| Keywords |
Annealing, Energy Levels, In-Diffusion, Intrinsic Point Defects (IPD), Nickel Ni, Precipitation, Silicon, Sinks, Solubility, Source |
| Full Paper |
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