Paper Title:
Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 183-185)
Edited by
D.J. Fisher
Pages
41-52
DOI
10.4028/www.scientific.net/DDF.183-185.41
Citation
A.P. Knights, P. G. Coleman, "Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon", Defect and Diffusion Forum, Vols. 183-185, pp. 41-52, 2000
Online since
August 2000
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Price
$32.00
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