Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon |
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| Journal | Defect and Diffusion Forum (Volumes 183 - 185) |
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| Volume | Defects and Diffusion in Semiconductors |
| Edited by | D.J. Fisher |
| Pages | 41-52 |
| DOI | 10.4028/www.scientific.net/DDF.183-185.41 |
| Citation | A.P. Knights et al., 2000, Defect and Diffusion Forum, 183-185, 41 |
| Authors | A.P. Knights, Paul G. Coleman |
| Keywords | Ion-Implantation, Positron Annihilation, Silicon, Vacancy |
| Full Paper | 
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