Paper Title:
Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 183-185)
Edited by
D.J. Fisher
Pages
77-84
DOI
10.4028/www.scientific.net/DDF.183-185.77
Citation
Y. Takano, S. Fuke, "Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates", Defect and Diffusion Forum, Vols. 183-185, pp. 77-84, 2000
Online since
August 2000
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Price
$32.00
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