Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates

Journal Defect and Diffusion Forum (Volumes 183 - 185)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 77-84
DOI 10.4028/www.scientific.net/DDF.183-185.77
Citation Y. Takano et al., 2000, Defect and Diffusion Forum, 183-185, 77
Authors Y. Takano, Shunro Fuke
Keywords GaAs-on-Si, InGaAs, Lattice-Mismatched Epitaxy, MOVPE, Thermal Cycle Annealing, Thermal Strain, Threading Dislocation Density
Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page