On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111) |
| Journal |
Defect and Diffusion Forum (Volumes 183 - 185) |
| Volume |
Defects and Diffusion in Semiconductors |
| Edited by |
D.J. Fisher |
| Pages |
95-102 |
| DOI |
10.4028/www.scientific.net/DDF.183-185.95 |
| Citation |
R. Koch et al., 2000, Defect and Diffusion Forum, 183-185, 95 |
| Authors |
R. Koch, B. Wassermann, G. Wedler |
| Keywords |
Germanium, Interdiffusion, Quantum Dot, Silicon, Strain Relaxation, Stress |
| Full Paper |
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