Paper Title:
On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 183-185)
Edited by
D.J. Fisher
Pages
95-102
DOI
10.4028/www.scientific.net/DDF.183-185.95
Citation
R. Koch, B. Wassermann, G. Wedler, "On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)", Defect and Diffusion Forum, Vols. 183-185, pp. 95-102, 2000
Online since
August 2000
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.