Paper Title:
Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 194-199)
Edited by
Y. Limoge and J.L. Bocquet
Pages
597-610
DOI
10.4028/www.scientific.net/DDF.194-199.597
Citation
M. S. Janson, M. K. Linnarsson, J.S. Christensen, P. Lévêque, A. Y. Kuznetsov, H.H. Radamson, A. Hallén, A. Nylandsted-Larsen, B. G. Svensson, "Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si", Defect and Diffusion Forum, Vols. 194-199, pp. 597-610, 2001
Online since
April 2001
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$32.00
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