Paper Title:
Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 194-199)
Edited by
Y. Limoge and J.L. Bocquet
Pages
617-622
DOI
10.4028/www.scientific.net/DDF.194-199.617
Citation
M. Yoshida, M. Morooka, M. Takahashi, H. Tomokage, "Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model", Defect and Diffusion Forum, Vols. 194-199, pp. 617-622, 2001
Online since
April 2001
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Price
$32.00
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