Paper Title:
Enhanced Diffusion Following Point Defect Injection into B in SiGe and Si
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 194-199)
Edited by
Y. Limoge and J.L. Bocquet
Pages
717-722
DOI
10.4028/www.scientific.net/DDF.194-199.717
Citation
A. F.W. Willoughby, J. M. Bonar, A. Dan, B. M. McGregor, "Enhanced Diffusion Following Point Defect Injection into B in SiGe and Si", Defect and Diffusion Forum, Vols. 194-199, pp. 717-722, 2001
Online since
April 2001
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.