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A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon

Journal Defect and Diffusion Forum (Volumes 200 - 202)
Volume Defects and Diffusion in Semiconductors IV
Edited by D.J. Fisher
Pages 125-134
DOI 10.4028/www.scientific.net/DDF.200-202.125
Citation Robert J. Falster et al., 2001, Defect and Diffusion Forum, 200-202, 125
Authors Robert J. Falster, Vladimir V. Voronkov
Keywords Defect Reactions, Denuded Zones, Interstitial Growth, Perfect Silicon, Rapid Thermal Processing, Vacancy Profiles
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