The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing |
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| Journal | Defect and Diffusion Forum (Volumes 200 - 202) |
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| Volume | Defects and Diffusion in Semiconductors IV |
| Edited by | D.J. Fisher |
| Pages | 145-152 |
| DOI | 10.4028/www.scientific.net/DDF.200-202.145 |
| Authors | H.B. Banisaukas, Kevin S. Jones, S. Talwar, D.C. Jacobson |
| Keywords | Ion Implantation, Laser Thermal Processing, Shallow Junctions, Silicon |
| Full Paper | 
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