The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing |
| Journal |
Defect and Diffusion Forum (Volumes 200 - 202) |
| Volume |
Defects and Diffusion in Semiconductors IV |
| Edited by |
D.J. Fisher |
| Pages |
145-152 |
| DOI |
10.4028/www.scientific.net/DDF.200-202.145 |
| Citation |
H.B. Banisaukas et al., 2001, Defect and Diffusion Forum, 200-202, 145 |
| Authors |
H.B. Banisaukas, Kevin S. Jones, S. Talwar, D.C. Jacobson |
| Keywords |
Ion-Implantation, Laser Thermal Processing, Shallow Junctions, Silicon |
| Full Paper |
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