Paper Title:
X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures
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Periodical
Defect and Diffusion Forum (Volumes 200-202)
Edited by
D.J. Fisher
Pages
153-160
DOI
10.4028/www.scientific.net/DDF.200-202.153
Citation
C. Ferrari, "X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures", Defect and Diffusion Forum, Vols. 200-202, pp. 153-160, 2002
Online since
November 2001
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