Paper Title:
Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 200-202)
Edited by
D.J. Fisher
Pages
161-176
DOI
10.4028/www.scientific.net/DDF.200-202.161
Citation
M. Mamor, F. D. Auret, S.A. Goodman, "Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe", Defect and Diffusion Forum, Vols. 200-202, pp. 161-176, 2002
Online since
November 2001
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