Paper Title:
Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si
  Abstract

  Info
Periodical
Defect and Diffusion Forum (Volumes 200-202)
Edited by
D.J. Fisher
Pages
177-188
DOI
10.4028/www.scientific.net/DDF.200-202.177
Citation
R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.J.L. Gossmann, C.S. Rafferty, "Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si", Defect and Diffusion Forum, Vols. 200-202, pp. 177-188, 2002
Online since
November 2001
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