Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si |
| Journal |
Defect and Diffusion Forum (Volumes 200 - 202) |
| Volume |
Defects and Diffusion in Semiconductors IV |
| Edited by |
D.J. Fisher |
| Pages |
177-188 |
| DOI |
10.4028/www.scientific.net/DDF.200-202.177 |
| Citation |
R. Kalyanaraman et al., 2001, Defect and Diffusion Forum, 200-202, 177 |
| Authors |
R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.J.L. Gossmann, C.S. Rafferty |
| Keywords |
Au Labelling, Excess Vacancies, High Energy-Implantation |
| Full Paper |
Get the full paper by clicking here
|
