Structural Defects and Electrical Properties of N/Ge Co-Implanted GaN |
| Journal |
Defect and Diffusion Forum (Volumes 206 - 207) |
| Volume |
Defects and Diffusion in Ceramics |
| Edited by |
D.J. Fisher |
| Pages |
75-86 |
| DOI |
10.4028/www.scientific.net/DDF.206-207.75 |
| Citation |
Yoshitaka Nakano et al., 2002, Defect and Diffusion Forum, 206-207, 75 |
| Authors |
Yoshitaka Nakano, Takashi Jimbo |
| Keywords |
Activation, Defect, Doping, Galium Nitride (GaN), Germanium, Implantation, Nitrogen, Positron |
| Full Paper |
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