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Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces

Journal Defect and Diffusion Forum (Volumes 210 - 212)
Volume Defects and Diffusion in Semiconductors
Edited by D.J. Fisher
Pages 103-112
DOI 10.4028/www.scientific.net/DDF.210-212.103
Citation Takashi Nakayama, 2002, Defect and Diffusion Forum, 210-212, 103
Authors Takashi Nakayama
Keywords Antisites, Defect, Growth, Hetero-Epitaxy, Heterovalent, Interface, Monte-Carlo Simulation, Surface, Vacancy, ZnSe/GaAs
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