On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation |
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| Journal | Defect and Diffusion Forum (Volumes 210 - 212) |
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| Volume | Defects and Diffusion in Semiconductors |
| Edited by | D.J. Fisher |
| Pages | 21-36 |
| DOI | 10.4028/www.scientific.net/DDF.210-212.21 |
| Authors | Liudmila I. Fedina |
| Keywords | {113} Defects, Intrinsic Point Defects (IPD), Recombination, Silicon, Surface Interaction |
| Full Paper | 
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