Paper Title:
On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation
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Periodical
Defect and Diffusion Forum (Volumes 210-212)
Edited by
D.J. Fisher
Pages
21-36
DOI
10.4028/www.scientific.net/DDF.210-212.21
Citation
L. I. Fedina, "On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation", Defect and Diffusion Forum, Vols. 210-212, pp. 21-36, 2002
Online since
November 2002
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